Design of novel normally-off AlGaN/GaN HEMTs with combined gate recess and floating charge structures

• Main Authors: Huang, H., Liang, Y.C., Samudra, G.S., Huang, C.-F.
• Other Authors: ELECTRICAL & COMPUTER ENGINEERING
• Format: Conference or Workshop Item
• Published: 2014
• Subjects: AlGaN/GaN HEMT; floating gate; gate charging; gate recess; normally-off operation; threshold voltage (Vth)
• Online Access: http://scholarbank.nus.edu.sg/handle/10635/83617
• Institution: National University of Singapore

10.1109/PEDS.2013.6527081