Low workfunction fully suicided gate on SiO2/Si and LaAlO 3/GOI n-MOSFETs

• Main Authors: Yu, D.S., Chin, A., Hung, B.F., Chen, W.J., Zhu, C.X., Li, M.-F., Zhu, S.Y., Kwong, D.L.
• Other Authors: ELECTRICAL & COMPUTER ENGINEERING
• Format: Conference or Workshop Item
• Published: 2014
• Online Access: http://scholarbank.nus.edu.sg/handle/10635/83910
• Institution: National University of Singapore

10.1109/DRC.2004.1367763