Plasma enhanced chemical vapor deposition and characterization of hydrogenated amorphous SiC films on Si
Materials Science Forum
Saved in:
Main Authors: | Wang, Y., Lin, J., Feng, Z.C., Chua, S.J., Alfred, C.H.H. |
---|---|
Other Authors: | PHYSICS |
Format: | Article |
Published: |
2014
|
Online Access: | http://scholarbank.nus.edu.sg/handle/10635/97555 |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Institution: | National University of Singapore |
Similar Items
-
Raman and Rutherford backscattering analyses of cubic SiC thin films grown on Si by vertical chemical vapor deposition
by: Feng, Z.C., et al.
Published: (2014) -
Structural, optical, and surface science studies of 4H-SiC epilayers grown by low pressure chemical vapor deposition
by: Feng, Z.C., et al.
Published: (2014) -
Correlation between optical properties and Si nanocrystal formation of Si-rich Si oxide films prepared by plasma-enhanced chemical vapor deposition
by: Chen, X.Y., et al.
Published: (2014) -
Surface chemical states on 3C-SiC/Si epilayers
by: Wee, A.T.S., et al.
Published: (2014) -
Structural and optical properties of GaN materials grown on Si by metalorganic chemical vapor deposition
by: Chen, J.L., et al.
Published: (2014)