Sub-30nm strained p-channel fin-type field-effect transistors with condensed SiGe source/drain stressors

by Tan, K.-M., Liow, T.-Y., Lee, R.T.P., Chui, K.-J., Tung, C.-H., Balasubramanian, N., Samudra, G.S., Yoo, W.-J., Yeo, Y.-C.
Published 2014

Material and electrical characterization of Ni- And Pt-germanides for p-channel germanium Schottky source/drain transistors

by Yao, H.B., Tan, C.C., Liew, S.L., Chua, C.T., Chua, C.K., Li, R., Lee, R.T.P., Lee, S.J., Chi, D.Z.
Published 2014

Process-induced strained P-MOSFET featuring nickel-platinum silicided source/drain

by Lee, R.T.P., Liow, T.-Y., Tan, K.-M., Ang, K.-W., Chui, K.-J., Guo, Q.-L., Samudra, G., Chi, D.-Z., Yeo, Y.-C.
Published 2014

Pulsed laser annealing of silicon-carbon source/drain in MuGFETs for enhanced dopant activation and high substitutional carbon concentration

by Koh, A.T.-Y., Lee, R.T.-P., Liu, F.-Y., Liow, T.-Y., Tan, K.M., Wang, X., Samudra, G.S., Balasubramanian, N., Chi, D.-Z., Yeo, Y.-C.
Published 2014

Siliconr: Carbon source/drain stressors: Intégration of a novel nickel aluminide-silicide and post-solid-phase-epitaxy anneal for reduced schottky-barrier and leakage

by Koh, S.-M., Zhou, W.J., Lee, R.T.P., Sinha, M., Ng, C.-M., Zhao, Z., Maynard, H., Variam, N., Erokhin, Y., Samudra, G., Yeo, Y.-C.
Published 2014

Nickel-aluminum alloy silicides with high aluminum content for contact resistance reduction and integration in n-channel field-effect transistors

by Koh, A.T.-Y., Lee, R.T.-P., Lim, A.E.-J., Lai, D.M.-Y., Chi, D.-Z., Hoe, K.-M., Balasubramanian, N., Samudra, G.S., Yeo, Y.-C.
Published 2014

Band edge NMOS work function for nickel fully-silicided (FUSI) gate obtained by the insertion of novel Y-, Tb-, and Yb-based interlayers

by Lim, A.E.-J., Lee, R.T.P., Wang, X.P., Hwang, W.S., Tung, C.-H., Lai, D.M.Y., Samudra, G., Kwong, D.-L., Yeo, Y.-C.
Published 2014

A high-stress liner comprising diamond-like carbon (DLC) for strained p-channel MOSFET

by Tan, K.-M., Zhu, M., Fang, W.-W., Yang, M., Liow, T.-Y., Lee, R.T.P., Hoe, K.M., Tung, C.-H., Balasubramanian, N., Samudra, G.S., Yeo, Y.-C.
Published 2014

Achieving conduction band-edge Schottky barrier height for arsenic-segregated nickel aluminide disilicide and implementation in FinFETs with ultra-narrow fin widths

by Lee, R.T.-P., Liow, T.-Y., Tan, K.-M., Lim, A.E.-J., Koh, A.T.-Y., Zhu, M., Lo, G.-Q., Samudra, G.S., Chi, D.Z., Yeo, Y.-C.
Published 2014

A new liner stressor with very high intrinsic stress (> 6 GPa) and low permittivity comprising diamond-like carbon (DLC) for strained p-channel transistors

by Tan, K.-M., Zhu, M., Fang, W.-W., Yang, M., Liow, T.-Y., Lee, R.T.P., Hoe, K.M., Tung, C.-H., Balasubramanian, N., Samudra, G.S., Yeo, Y.-C.
Published 2014

Strained n-channel FinFETs featuring in situ doped silicon-carbon (Si1-yCy) source and drain stressors with high carbon content

by Liow, T.-Y., Tan, K.-M., Weeks, D., Lee, R.T.P., Zhu, M., Hoe, K.-M., Tung, C.-H., Bauer, M., Spear, J., Thomas, S.G., Samudra, G.S., Balasubramanian, N., Yeo, Y.-C.
Published 2014

Strained FinFETs with in-situ doped Si1-yCy source and drain stressors: Performance boost with lateral stressor encroachment and high substitutional carbon content

by Liow, T.-Y., Tan, K.-M., Weeks, D., Lee, R.T.P., Zhu, M., Hoe, K.-M., Tung, C.-H., Bauer, M., Spear, J., Thomas, S.G., Samudra, G.S., Balasubramanian, N., Yeo, Y.-C.
Published 2014

Novel epitaxial nickel aluminide-silicide with low Schottky-Barrier and series resistance for enhanced performance of dopant-segregated source/drain N-channel MuGFETs

by Lee, R.T.P., Liow, T.-Y., Tan, K.-M., Lim, A.E.-J., Ho, C.-S., Hoe, K.-M., Lai, M.Y., Osipowicz, T., Lo, G.-Q., Samudra, G., Chi, D.-Z., Yeo, Y.-C.
Published 2014

Novel nickel-alloy suicides for source/drain contact resistance reduction in N-channel multiple-gate transistors with sub-35nm gate length

by Lee, R.T.P., Liow, T.-Y., Tan, K.-M., Lim, A.E.-J., Wong, H.-S., Lim, P.-C., Lai, D.M.Y., Lo, G.-Q., Tung, C.-H., Samudra, G., Chi, D.-Z., Yeo, Y.-C.
Published 2014

Nickel-silicide: Carbon contact technology for N-channel MOSFETs with silicon-carbon source/drain

by Lee, R.T.P., Yang, L.-T., Liow, T.-Y., Tan, K.-M., Lim, A.E.-J., Ang, K.-W., Lai, D.M.Y., Hoe, K.M., Lo, G.-Q., Samudra, G.S., Chi, D.Z., Yeo, Y.-C.
Published 2014

Selenium Co-implantation and segregation as a new contact technology for nanoscale SOI N-FETs featuring NiSi:C formed on Silicon-carbon (Si:C) source/drain stressors

by Wong, H.-S., Liu, F.-Y., Ang, K.-W., Koh, S.-M., Koh, A.T.-Y., Liow, T.-Y., Lee, R.T.-P., Lim, A.E.-J., Fang, W.-W., Zhu, M., Chan, L., Balasubramaniam, N., Samudra, G., Yeo, Y.-C.
Published 2014

Novel and cost-efficient single metallic silicide integration solution with dual Schottky-barrier achieved by aluminum inter-diffusion for FinFET CMOS technology with enhanced perf...

by Lee, R.T.-P., Koh, A.T.-Y., Fang, W.-W., Tan, K.-M., Lim, A.E.-J., Liow, T.-Y., Chow, S.-Y., Yong, A.M., Hoong, S.W., Lo, G.-Q., Samudra, G.S., Chi, D.-Z., Yeo, Y.-C.
Published 2014

Route to low parasitic resistance in MuGFETs with silicon-carbon source/drain: Integration of novel low barrier Ni(M)Si:C metal silicides and pulsed laser annealing

by Lee, R.T.-P., Koh, A.T.-Y., Liu, F.-Y., Fang, W.-W., Liow, T.-Y., Tan, K.-M., Lim, P.-C., Lim, A.E.-J., Zhu, M., Hoe, K.-M., Tung, C.-H., Lo, G.-Q., Wang, X., Low, D.K.-Y., Samudra, G.S., Chi, D.-Z., Yeo, Y.-C.
Published 2014