MOCVD growth of InGaP/GaAs heterojunction bipolar transistors on 200 mm Si wafers for heterogeneous integration with Si CMOS

by Loke, Wan Khai, Lee, Kwang Hong, Wang, Yue, Tan, Chuan Seng, Fitzgerald, Eugene A., Yoon, Soon Fatt
Published 2020

Effect of growth temperature on the epitaxy strain relaxation and the tilt of InxAl1−x as graded layer grown by solid-source molecular beam epitaxy

by Loke, Wan Khai, Tan, Kian Hua, Wicaksono, Satrio, Yoon, Soon Fatt, Owen, Man Hon Samuel, Yeo, Yee-Chia
Published 2013

N-channel InGaAs field-effect transistors formed on germanium-on-insulator substrates

by Ivana, Subramanian, Sujith, Owen, Man Hon Samuel, Tan, Kian Hua, Loke, Wan Khai, Wicaksono, Satrio, Yoon, Soon Fatt, Yeo, Yee-Chia
Published 2013

In 0.49 Ga 0.51 P/GaAs heterojunction bipolar transistors (HBTs) on 200 mm Si substrates : effects of base thickness, base and sub-collector doping concentrations

by Wang, Yue, Lee, Kwang Hong, Loke, Wan Khai, Chiah, Ben Siau, Zhou, Xing, Yoon, Soon Fatt, Tan, Chuan Seng, Fitzgerald, Eugene
Published 2019

In0.3Ga0.7As heterojunction bipolar transistor grown on GeSi substrate for high-frequency application

by Loke, Wan Khai, Wang, Yue, Gao, Yu, Khaw, Lina, Lee, Kenneth Eng Kian, Tan, Chuan Seng, Fitzgerald, Eugene A., Yoon, Soon Fatt
Published 2022

Low temperature grown GaNAsSb : a promising material for photoconductive switch application

by Li, D. S., Saadsaoud, N., Tripon-Canseliet, C., Lampin, J. F., Decoster, D., Chazelas, J., Yoon, Soon Fatt, Wicaksono, Satrio, Loke, Wan Khai, Tan, Kian Hua
Published 2013

CMOS-compatible Ti/TiN/Al refractory ohmic contact for GaAs heterojunction bipolar transistors grown on Ge/Si substrate

by Wang, Yue, Loke, Wan Khai, Gao, Yu, Lee, Kwang Hong, Lee, Kenneth Eng Kian, Gan, Chee Lip, Tan, Chuan Seng, Fitzgerald, Eugene A., Yoon, Soon Fatt
Published 2022

GaInNAs double-barrier quantum well infrared photodetector with the photodetection at 1.24 μm

by Ma, B. S., Fan, Weijun, Dang, Y. X., Cheah, Weng Kwong, Loke, Wan Khai, Liu, W., Li, D. S., Yoon, Soon Fatt, Zhang, Dao Hua, Wang, H., Tung, Chih Hang
Published 2013

High-performance GeSn photodetector and fin field-effect transistor (FinFET) on an advanced GeSn-on-insulator platform

by Wang, Wei, Lei, Dian, Huang, Yi-Chiau, Lee, Kwang Hong, Loke, Wan-Khai, Dong, Yuan, Xu, Shengqiang, Tan, Chuan Seng, Wang, Hong, Yoon, Soon-Fatt, Gong, Xiao, Yeo, Yee-Chia
Published 2019

Integration of InGaAs MOSFETs and GaAs/ AlGaAs lasers on Si Substrate for advanced opto-electronic integrated circuits (OEICs)

by Kumar, Annie, Lee, Shuh-Ying, Yadav, Sachin, Tan, Kian Hua, Loke, Wan Khai, Dong, Yuan, Lee, Kwang Hong, Wicaksono, Satrio, Liang, Gengchiau, Yoon, Soon-Fatt, Antoniadis, Dimitri, Yeo, Yee-Chia, Gong, Xiao
Published 2019

High-frequency characteristics of InGaP/GaAs double heterojunction bipolar transistor epitaxially grown on 200 mm Ge/Si wafers

by Loke, Wan Khai, Wang, Yue, Lee, Kwang Hong, Liu, Zhihong, Xie, Hanlin, Chiah, Siau Ben, Lee, Kenneth Eng Kian, Zhou, Xing, Tan, Chuan Seng, Ng, Geok Ing, Fitzgerald, Eugene A., Yoon, Soon Fatt
Published 2020