Photoluminescence characteristics of GaInNAs quantum wells annealed at high temperature

Photoluminescence characteristics of GaInNAs quantum wells annealed at high temperature

The photoluminescence (PL) characteristics of GaInNAs quantum wells (QWs) after high-temperature postgrowth annealing were studied. The QWs were grown using a radio-frequency nitrogen plasma source in conjunction with a solid-source molecular-beam epitaxy system. It was found that annealing at high...

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書目詳細資料
Main Authors:	Ng, T. K., Yoon, Soon Fatt, Wang, S. Z., Loke, Wan Khai, Fan, Weijun
其他作者:	School of Electrical and Electronic Engineering
格式:	Article
語言:	English
出版:	2013
主題:	DRNTU::Engineering::Electrical and electronic engineering
在線閱讀:	https://hdl.handle.net/10356/100399 http://hdl.handle.net/10220/18004
標簽:	添加標簽沒有標簽, 成為第一個標記此記錄!

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