Black GaAs : gold-assisted chemical etching for light trapping and photon recycling
Thanks to its excellent semiconductor properties, like high charge carrier mobility and absorption coefficient in the near infrared spectral region, GaAs is the material of choice for thin film photovoltaic devices. Because of its high reflectivity, surface microstructuring is a viable approach to f...
Saved in:
Main Authors: | Lova, Paola, Soci, Cesare |
---|---|
其他作者: | School of Physical and Mathematical Sciences |
格式: | Article |
語言: | English |
出版: |
2020
|
主題: | |
在線閱讀: | https://hdl.handle.net/10356/145317 |
標簽: |
添加標簽
沒有標簽, 成為第一個標記此記錄!
|
機構: | Nanyang Technological University |
語言: | English |
相似書籍
-
Mechanism and Catalyst Stability of Metal-Assisted Chemical Etching of Silicon
由: PRAYUDI LIANTO
出版: (2013) -
Anti-reflective porous Ge by open-circuit and lithography-free metal-assisted chemical etching
由: Zhang, Yi-Yu, et al.
出版: (2022) -
METAL ASSISTED CHEMICAL ETCHING OF SEMICONDUCTORS FOR ELECTRONICS APPLICATION
由: KONG LINGYU
出版: (2017) -
Controlled Stepwise Wet Etching of Polycrystalline Mo Nanowires
由: Khakimjon Saidov, et al.
出版: (2024) -
A comparison of the selective etching characteristics of conventional and low-temperature-grown GaAs over AlAs by various etching solutions
由: Zhao, R., et al.
出版: (2014)