Ultraviolet antireflective porous nanoscale periodic hole array of 4H-SiC by photon-enhanced metal-assisted chemical etching

• Main Authors: Liao, Yikai, Shin, Sang-Ho, Kim, Munho
• Other Authors: School of Electrical and Electronic Engineering
• Format: Article
• Language: English
• Published: 2022
• Subjects: Engineering::Electrical and electronic engineering::Semiconductors; 4H-SiC; Etching
• Online Access: https://hdl.handle.net/10356/156829
• Institution: Nanyang Technological University

Benefitting from the outstanding stability and suitable bandgap energy, silicon carbide (SiC) shows promising applications especially for ultraviolet light detection in harsh environments. Traditionally, 4H-SiC surface antireflection textures which boost light harvesting have been realized by plasma...