AlGaN/GaN HEMT-based ultraviolet photodetectors with enhanced device efficiency

AlGaN/GaN HEMT-based ultraviolet photodetectors with enhanced device efficiency

AlGaN/GaN HEMT structures have gained significant attention in recent years due to their wide range of applications in power and optoelectronics, including electric vehicles, environmental monitoring, and satellite communication. These structures possess excellent properties such as wide bandgap, hi...

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書目詳細資料
主要作者:	Ahmed Salah Hawash Razeen
其他作者:	Radhakrishnan K
格式:	Thesis-Doctor of Philosophy
語言:	English
出版:	Nanyang Technological University 2024
主題:	Engineering AlGaN/GaN HEMT UV photodetectors Nanophotonics
在線閱讀:	https://hdl.handle.net/10356/177664
標簽:	添加標簽沒有標簽, 成為第一個標記此記錄!

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