GaN HEMTs device modeling in high-power and high-frequency applications

GaN HEMTs device modeling in high-power and high-frequency applications

Wide Band Gap semiconductor devices are widely used in the high-power and high-frequency applications. Power GaN HEMTs attract the attentions of many power device and circuit designers to achieve better chip performance. However, the investigation and improvement of GaN HEMTs are time-consuming and...

Saved in:

書目詳細資料
主要作者:	Zhang, Juncheng
其他作者:	Zheng Yuanjin
格式:	Thesis-Master by Coursework
語言:	English
出版:	Nanyang Technological University 2025
主題:	Engineering Physics Power semiconductor devices GaN HEMTs
在線閱讀:	https://hdl.handle.net/10356/182475
標簽:	添加標簽沒有標簽, 成為第一個標記此記錄!

相似書籍

Analytical modelling of high temperature characteristics on the DC responses for Schottky-gate AlGaN/GaN HEMT devices
由: Wang, Y.-H., et al.
出版: (2014)

AlGaN/GaN HEMT-based ultraviolet photodetectors with enhanced device efficiency
由: Ahmed Salah Hawash Razeen
出版: (2024)

Fabrication and characterization of AIGaN/GaN HEMTs
由: HOY KIN MENG, DERRICK
出版: (2010)

Investigation of self-heating effect on DC and RF performances in AlGaN/GaN HEMTs on CVD-Diamond
由: Ranjan, Kumud, et al.
出版: (2020)

Effects of gate field plates on the surface state related current collapse in AlGaN/GaN HEMTs
由: Huang, H., et al.
出版: (2014)

Variable range hopping-assisted parasitic channel leakage in AlN/GaN/AlGaN HEMTs on Si
由: Liu, Siyu, et al.
出版: (2024)

InAlN/GaN HEMTs on Si With High fT of 250 GHz
由: Xing, Weichuan, et al.
出版: (2020)

Impact of carbon impurities on the initial leakage current of AlGaN/GaN high electron mobility transistors
由: Gao, Yu, et al.
出版: (2019)

AlGaN/GaN high electron mobility transistors with implanted ohmic contacts
由: Wang, H.T., et al.
出版: (2014)

Characterization of deep region trapping effects in AlN/GaN HEMTs with an AlGaN back barrier utilizing tri-state pulsed IV technique
由: Zhuang, Yihao, et al.
出版: (2024)

AlGan/Gan metal-oxide-semiconductor high electron mobility transistors (MOS-HEMTs) with novel gate oxides
由: LIU CHANG
出版: (2010)

An AlGaN/GaN high electron mobility transistor with a built-in light emitter using radiative recombination of two-dimensional electron gas and holes
由: Chang, C.-Y., et al.
出版: (2021)

Temperature dependent characteristics of InAlN/GaN HEMTs for mm-wave applications
由: Xing, Weichuan, et al.
出版: (2018)

Au-free normally-off AlGaN/GaN-on-Si MIS-HEMTs using combined partially recessed and fluorinated trap-charge gate structures
由: Huang, H., et al.
出版: (2014)

STUDY ON THE REDUCTION OF ACCESS RESISTANCE OF INAIN/GAN HIGH ELECTRON MOBILITY TRANSISTORS
由: LIU YI
出版: (2015)

Enhanced performance of ultraviolet AlGaN/GaN photo-HEMTs by optimized channel isolation schemes
由: Mondal, Ramit Kumar, et al.
出版: (2024)

Design of novel normally-off AlGaN/GaN HEMTs with combined gate recess and floating charge structures
由: Huang, H., et al.
出版: (2014)

Improved reliability of AlGaN/GaN-on-Si high electron mobility transistors (HEMTs) with high density silicon nitride passivation
由: Sasangka, W. A., et al.
出版: (2017)

GaN-based semiconductor saturable absorber mirror operating around 415 nm
由: Xiang, N., et al.
出版: (2014)

Comments on "thermal resistance calculation of AlGaN-GaN devices"
由: Yin, W.-Y., et al.
出版: (2014)

Realistic simulation on reverse characteristics of SiC/GaN p-n junctions for high power semiconductor devices
由: Wei, G., et al.
出版: (2014)

APPLICATIONS OF PLASMONICS FOR TERAHERTZ DETECTION, MODULATION AND WAVEGUIDING
由: HOU HAOWEN
出版: (2017)

Vertical GaN-on-GaN Schottky diodes as α-particle radiation sensors
由: Sandupatla, Abhinay, et al.
出版: (2020)

Application of ion implantation to the fabrication of GAN-based devices
由: WANG HAITING
出版: (2010)

Realistic simulations on reverse junction characteristics of sic and GaN power semiconductor devices
由: Wei, G., et al.
出版: (2014)

STUDY OF CMOS COMPATIBLE RUTHENIUM OXIDE SCHOTTKY CONTACTS FOR ALGAN/GAN AND INALN/GAN DIODES AND HIGH MOBILITY TRANSISTORS GROWN ON SILICON (111) SUBSTRATES
由: LWIN MIN KYAW
出版: (2015)

DESIGN AND FABRICATION OF ALL GAN INTEGRATED DC-DC POWER CONVERTER
由: SUN RUIZE
出版: (2018)

MODELLING, SIMULATION, FABRICATION AND CHARACTERISATION OF ALGAN/GAN FIN-GATE HIGH ELECTION MOBILITY TRANSISTERS (FIN-HEMTS)
由: REN KAILIN
出版: (2021)

An Accurate Neural Network-Based Consistent Gate Charge Model for GaN HEMTs by Refining Intrinsic Capacitances
由: Wenrui Hu, et al.
出版: (2021)

Investigation of the role of pre-existing oxide in the initial degradation mechanism in AlGaN/GaN HEMTs under ON-state stress
由: Tan, H. T., et al.
出版: (2024)

Advantages of the Blue InGaN/GaN Light-Emitting Diodes with an AlGaN/GaN/AlGaN Quantum Well Structured Electron Blocking Layer
由: Ju, Zhen Gang, et al.
出版: (2016)

A Threshold Voltage Model for Charge Trapping Effect of AlGaN/GaN HEMTs
由: Jia, Y., et al.
出版: (2021)

Studies of gallium nitride (GaN) based high electron mobility transistor (HEMTS)
由: Ong, Eugene Wei Han
出版: (2024)

Impact of Al2O3 incorporation on device performance of HfO2 gate dielectric AlGaN/GaN MIS-HFETs
由: Tian, F., et al.
出版: (2014)

Investigation of optical properties of nanoporous GaN films
由: Vajpeyi, A.P., et al.
出版: (2014)

Surface morphology evolution of N-polar GaN on SiC for HEMT heterostructures grown by plasma-assisted molecular beam epitaxy
由: Huo, Lili, et al.
出版: (2023)

Study on InGaN/GaN quantum structures and their applications in semiconductor saturable absorber mirror
由: LIN FEN
出版: (2010)

Telecom single-photon emitters in GaN operating at room temperature: Embedment into bullseye antennas
由: Meunier, Max, et al.
出版: (2023)

Investigation of V-defects formation in InGaN/GaN multiple quantum well grown on sapphire
由: Yong, A.M., et al.
出版: (2014)

A dual-character InGaN/GaN multiple quantum well device for electroluminescence and photovoltaic absorption of near-mutually exclusive wavelengths
由: Ho, J.-W., et al.
出版: (2014)