Formation of silicon nodules and the different methods of removing them
Experiments have been done on the use of different metallization target, different metallization scheme and deposition temperature to characterize on the silicon nodule defect. This report summarizes on the investigation on the silicon precipitation problem.
Saved in:
Main Author: | Chan, Ching Kok. |
---|---|
Other Authors: | Ahn Jaeshin |
Format: | Theses and Dissertations |
Published: |
2008
|
Subjects: | |
Online Access: | http://hdl.handle.net/10356/3149 |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Institution: | Nanyang Technological University |
Similar Items
-
An area efficient high turn ratio monolithic transformer for silicon RFIC
by: Lim, Chee Chong, et al.
Published: (2010) -
Characterization and modeling of on-chip interconnects for silicon RFIC design
by: Ong, Beng Hwee
Published: (2008) -
Design, modeling and characterization of on-chip transformer for silicon RFIC
by: Lim, Chee Chong
Published: (2010) -
Modeling and layout optimization of differential inductors for Silicon-based RFIC applications
by: Sia, Choon Beng, et al.
Published: (2009) -
Electrical modeling of through-silicon-via for 3D integrated circuits
by: Santhosh Onkaraiah.
Published: (2011)