Implementation of multiple band gaps of quantum wells/dots based on inductively-coupled argon plasma technique

Implementation of multiple band gaps of quantum wells/dots based on inductively-coupled argon plasma technique

Recently, defect-enhanced interdiffusion, known as intermixing, has been extensively investigated on a wide range of III-V semiconductor quantum well (QW) and quantum dot (QD) structures as a postgrowth process to implement multiple band-gap engergies across a single substrate for monolithic integra...

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書目詳細資料
主要作者:	Dong, Nie
其他作者:	Wang Yixin
格式:	Theses and Dissertations
語言:	English
出版:	2010
主題:	DRNTU::Engineering::Electrical and electronic engineering
在線閱讀:	https://hdl.handle.net/10356/39929
標簽:	添加標簽沒有標簽, 成為第一個標記此記錄!

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