Nanoscale characterization of resistive switching phenomena in HFO2-based stacks using transmission electron microscopy and atomistic simulation
This thesis presents a comprehensive study combining electrical characterization, physical analysis, and atomistic simulation on the mechanism of resistive switching. The metal-insulator-semiconductor (MIS) stack based on conventional transistor was used in this study as an effective test structure...
Saved in:
Main Author: | Wu, Xing |
---|---|
Other Authors: | Bai Ping |
Format: | Theses and Dissertations |
Language: | English |
Published: |
2012
|
Subjects: | |
Online Access: | https://hdl.handle.net/10356/50666 |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Institution: | Nanyang Technological University |
Language: | English |
Similar Items
-
Nano-scale characterization of advanced gate stacks using transmission electron microscopy and electron energy loss spectroscopy
by: Li, Xiang
Published: (2010) -
Nanoscale characterization of advanced high-κ gate dielectric stacks via scanning tunneling microscopy
by: Yew, Kwang Sing
Published: (2014) -
CHARACTERIZING RESISTIVE SWITCHING PHENOMENA OF BINARY TRANSITION METAL OXIDES BY SCANNING PROBE MICROSCOPY TECHNIQUES
by: LU WANHENG
Published: (2017) -
Atomistic simulation study of high-κ oxide defects for understanding gate stack and RRAM reliability
by: Gu, Chenjie
Published: (2015) -
Time-resolved observations of liquid − liquid phase separation at the nanoscale using in situ liquid transmission electron microscopy
by: Le Ferrand, Hortense, et al.
Published: (2021)