Nanoscale characterization of resistive switching phenomena in HFO2-based stacks using transmission electron microscopy and atomistic simulation

This thesis presents a comprehensive study combining electrical characterization, physical analysis, and atomistic simulation on the mechanism of resistive switching. The metal-insulator-semiconductor (MIS) stack based on conventional transistor was used in this study as an effective test structure...

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Bibliographic Details
Main Author: Wu, Xing
Other Authors: Bai Ping
Format: Theses and Dissertations
Language:English
Published: 2012
Subjects:
Online Access:https://hdl.handle.net/10356/50666
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Institution: Nanyang Technological University
Language: English

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