Development of sputtered SrBi2Ta2O9 thin films for nonvolatile random access memory application

Development of sputtered SrBi2Ta2O9 thin films for nonvolatile random access memory application

Utilization of ferroelectric thin films for nonvolatile random access memory (NvRAM) applications has been under intensive investigation. Films for transistor-type memory require possessing these properties: a large remnant polarization, a low coercive field (2Ec), sufficient fatigue endurance again...

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書目詳細資料
主要作者:	Li, Yibin
其他作者:	Zhang Shanyong, Sam
格式:	Theses and Dissertations
出版:	2008
主題:	DRNTU::Engineering::Materials::Microelectronics and semiconductor materials::Thin films
在線閱讀:	https://hdl.handle.net/10356/5277
標簽:	添加標簽沒有標簽, 成為第一個標記此記錄!

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