Influence of Si-nanocrystal distribution in the oxide on the charging behavior of MOS structures

In this brief, the electrical characteristics of MOS structures with specially designed distributions of Si nanocrystals (nc-Si) embedded in the oxides were investigated, and very different behaviors in the electrical characteristics are observed as a result of the difference in the nc-Si distributi...

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Bibliographic Details
Main Authors: Tseng, Ampere A., Liu, Yang, Chen, Tupei, Ng, Chi Yung, Ding, Liang, Tse, Man Siu, Fung, Stevenson Hon Yuen
Other Authors: School of Electrical and Electronic Engineering
Format: Article
Language:English
Published: 2010
Subjects:
Online Access:https://hdl.handle.net/10356/90763
http://hdl.handle.net/10220/6415
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Institution: Nanyang Technological University
Language: English

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