Influence of Si-nanocrystal distribution in the oxide on the charging behavior of MOS structures

Influence of Si-nanocrystal distribution in the oxide on the charging behavior of MOS structures

In this brief, the electrical characteristics of MOS structures with specially designed distributions of Si nanocrystals (nc-Si) embedded in the oxides were investigated, and very different behaviors in the electrical characteristics are observed as a result of the difference in the nc-Si distributi...

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書目詳細資料
Main Authors:	Tseng, Ampere A., Liu, Yang, Chen, Tupei, Ng, Chi Yung, Ding, Liang, Tse, Man Siu, Fung, Stevenson Hon Yuen
其他作者:	School of Electrical and Electronic Engineering
格式:	Article
語言:	English
出版:	2010
主題:	DRNTU::Engineering::Electrical and electronic engineering::Nanoelectronics
在線閱讀:	https://hdl.handle.net/10356/90763 http://hdl.handle.net/10220/6415
標簽:	添加標簽沒有標簽, 成為第一個標記此記錄!

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