The impact of etch-stop layer for borderless contacts on deep submicron CMOS device performance : a comparative study

• المؤلفون الرئيسيون: Liao, H., Goh, L. N. L., Liu, H., Sudijono, J. L., Elgin, Q., Sanford, C., Lee, Pooi See
• مؤلفون آخرون: School of Materials Science & Engineering
• التنسيق: مقال
• اللغة: English
• منشور في: 2013
• الموضوعات: DRNTU::Engineering::Materials::Microelectronics and semiconductor materials::Thin films
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/97318; http://hdl.handle.net/10220/10502

The impact of etch-stop layers (ESLs) of borderless contact (BLC) on transistor characteristics, especially for NMOSFETs, was studied concerning on the ESL-induced mechanical stress. Two new ESL schemes using dual etch-stop layers: (scheme A) SiON (bottom)/SiN (top) and (scheme B) SiN (bottom)/SiON...