GaN-on-Silicon integration technology

• Main Authors: Ng, Geok Ing, Arulkumaran, Subramaniam, Vicknesh, Sahmuganathan, Wang, H., Ang, K. S., Kumar, C. M. Manoj, Ranjan, K., Lo, Guo-Qiang, Tripathy, Sudhiranjan, Boon, Chirn Chye, Lim, Wei Meng
• Other Authors: School of Electrical and Electronic Engineering
• Format: Conference or Workshop Item
• Language: English
• Published: 2013
• Online Access: https://hdl.handle.net/10356/98842; http://hdl.handle.net/10220/12826

This work presents our recent progress on addressing two major challenges to realizing GaN-Silicon integration namely epitaxial growth of GaN-on-Silicon and CMOS-compatible process. We have successfully demonstrated 0.3-μm gate-length GaN HEMTs on 8-inch Si(111) substrate with fT of 28GHz and fmax o...