Growth of crack-free GaN on AlN quantum dots on Si(111)substrates by MOCVD
Materials Research Society Symposium - Proceedings
Saved in:
Main Authors: | Sun, W.H., Chen, J.L., Wang, L.S., Chua, S.J. |
---|---|
Other Authors: | ELECTRICAL & COMPUTER ENGINEERING |
Format: | Conference or Workshop Item |
Published: |
2016
|
Online Access: | http://scholarbank.nus.edu.sg/handle/10635/131604 |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Institution: | National University of Singapore |
Similar Items
-
Structural and morphological qualities of InGaN grown via elevated pressures in MOCVD on AlN/Si(111) substrates
by: Ho, J.W., et al.
Published: (2014) -
MOCVD growth and characterization of GaN films with composite intermediate layer buffer on Si substrate
by: Zhang, X., et al.
Published: (2014) -
Material properties of GaN grown by MOCVD
by: Liu, W., et al.
Published: (2014) -
Strain states of AlN/GaN-stress mitigating layer and their effect on GaN buffer layer grown by ammonia molecular beam epitaxy on 100-mm Si(111)
by: Ravikiran, L., et al.
Published: (2014) -
Micro-Raman investigation of strain in GaN and Al xGa 1-xN/GaN heterostructures grown on Si(111)
by: Tripathy, S., et al.
Published: (2014)