Bit-Cell Level Optimization for Non-volatile Memories Using Magnetic Tunnel Junctions and Spin-Transfer Torque Switching
10.1109/TNANO.2011.2169456
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| Main Authors: | , , |
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| Other Authors: | |
| Format: | Article |
| Language: | English |
| Published: |
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
2019
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| Subjects: | |
| Online Access: | https://scholarbank.nus.edu.sg/handle/10635/156164 |
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| Institution: | National University of Singapore |
| Language: | English |