Fabrication & electrical characterization of SiGe nanocrystal flash memory devices embedded in high k dielectrics
Master's
Saved in:
Main Author: | ROHIT KUMAR GUPTA |
---|---|
Other Authors: | ELECTRICAL & COMPUTER ENGINEERING |
Format: | Theses and Dissertations |
Language: | English |
Published: |
2010
|
Subjects: | |
Online Access: | http://scholarbank.nus.edu.sg/handle/10635/17024 |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Institution: | National University of Singapore |
Language: | English |
Similar Items
-
Study on properties of metal nanocrystals for flash memory application
by: TAN YEE LIN, ZERLINDA
Published: (2010) -
Plasma etching optimization of oxide/nitride/oxide interpoly dielectric breakdown time in flash memory devices
by: Cha, C.L., et al.
Published: (2014) -
Ge-rich (70%) SiGe nanowire MOSFET fabricated using pattern-dependent Ge-condensation technique
by: Jiang, Y., et al.
Published: (2014) -
The DFT Study of Electronic and Optical Properties of the Surface Functional SiGe, GeSn and GeSn Nanostructures
by: Roohan Thirayatorn, et al.
Published: (2020) -
SiGe bandgap tuning for high speed eam
by: Mastronardi, Lorenzo, et al.
Published: (2019)