Nickel Silicide Interface Engineering for Contact Resistance Reduction in Nanoscale CMOS Technology

Nickel Silicide Interface Engineering for Contact Resistance Reduction in Nanoscale CMOS Technology

Ph.D

Saved in:

書目詳細資料
主要作者:	WONG HOONG SHING
其他作者:	ELECTRICAL & COMPUTER ENGINEERING
格式:	Theses and Dissertations
語言:	English
出版:	2011
主題:	NiSi, Interface, contact resistance, CMOS, Selenium, Antimony
在線閱讀:	http://scholarbank.nus.edu.sg/handle/10635/21000
標簽:	添加標簽沒有標簽, 成為第一個標記此記錄!

相似書籍

Sub-0.1-eV effective Schottky-barrier height for NiSi on n-type Si (100) using antimony segregation
由: Wong, H.-S., et al.
出版: (2014)

Fully Silicided NiSi and Germanided NiGe Dual Gates on SiO 2 n- and p-MOSFETs
由: Yu, D.S., et al.
出版: (2014)

Advanced source and drain contact engineering for multiple- gate transistors
由: LEE TEK PO RINUS
出版: (2010)

Nickel-silicide contact technology with dual near-band-edge barrier heights and integration in CMOS FinFETs with single mask
由: Sinha, M., et al.
出版: (2014)

Reduction of leakage and low-frequency noise in MOS transistors through two-step RTA of NiSi-Silicide technology
由: Yang, R., et al.
出版: (2014)

Effectiveness of aluminum incorporation in nickel silicide and nickel germanide metal gates for work function reduction
由: Lim, A.E.-J., et al.
出版: (2014)

Alloy effects on nickel silicides formation and the investigation of NiSi as electrode material of ZnO devices
由: REN WEI
出版: (2010)

New salicidation technology with Ni(Pt) alloy for MOSFETs
由: Lee, P.S., et al.
出版: (2014)

Achieving conduction band-edge Schottky barrier height for arsenic-segregated nickel aluminide disilicide and implementation in FinFETs with ultra-narrow fin widths
由: Lee, R.T.-P., et al.
出版: (2014)

Nickel silicide formation on Si(100) and poly-Si with a presilicide N2 + implantation
由: Lee, P.S., et al.
出版: (2014)

Fully silicided NiSi gate on La2O3 MOSFETs
由: Lin, C.Y., et al.
出版: (2014)

Nickel-silicide: Carbon contact technology for N-channel MOSFETs with silicon-carbon source/drain
由: Lee, R.T.P., et al.
出版: (2014)

Annealing effects on ZnO/NiSi contact
由: Wei, R., et al.
出版: (2014)

Contact resistance reduction technology using aluminum implant and segregation for strained p-FinFETs with silicongermanium source/drain
由: Sinha, M., et al.
出版: (2014)

Effective Schottky Barrier height reduction using sulfur or selenium at the NiSi/n-Si (100) interface for low resistance contacts
由: Wong, H.-S., et al.
出版: (2014)

Al 2O 3-Ge-On-Insulator n- and p-MOSFETs With Fully NiSi and NiGe Dual Gates
由: Yu, D.S., et al.
出版: (2014)

Effects of prolonged annealing on NiSi at low temperature (500°C)
由: Anisur, M.R., et al.
出版: (2014)

Schottky barrier engineering for contact resistance reduction in nanoscale CMOS transistors
由: MANTAVYA SINHA
出版: (2010)

Technology options for reducing contact resistances in nanoscale metal-oxide-semiconductor field-effect transistors
由: Yeo, Y.-C.
出版: (2014)

Speciation studies of toxic trace elements in environmental samples by ICP-MS
由: YU CHUNHAI
出版: (2010)

Novel nickel silicide contact technology using selenium segregation for SOI N-FETs with silicon-carbon source/drain stressors
由: Wong, H.-S., et al.
出版: (2014)

Experimental & computational studies on transition-metal silicides for novel applications in advance CMOS technologies
由: ZHAO FANGFANG
出版: (2010)

Bottom-up 1-D nanowires and their applications
由: SUN ZHIQIANG
出版: (2010)

Optimization of Sb2(S, Se)3 photoabsorbers for photoelectrochemical hydrogen evolution reaction
由: Lee, Kian Jie
出版: (2024)

Selenium segregation for lowering the contact resistance in ultrathin-body MOSFETs with fully metallized source/drain
由: Wong, H.-S., et al.
出版: (2014)

Source and drain series resistance reduction for N-channel transistors using solid antimony (Sb) segregation (SSbS) during silicidation
由: Wong, H.-S., et al.
出版: (2014)

Selenium segregation for effective schottky barrier height reduction in NiGe/n-Ge contacts
由: Tong, Y., et al.
出版: (2014)

Interfaces at metals/oxides: Characterizations and Atomistic Modeling
由: WONG TEN IT
出版: (2013)

Contact-resistance reduction for strained n-FinFETs with silicon-carbon source/drain and platinum-based silicide contacts featuring tellurium implantation and segregation
由: Koh, S.-M., et al.
出版: (2014)

Low-contact-resistance graphene devices with nickel-etched-graphene contacts
由: Leong, W.S., et al.
出版: (2014)

Schottky barrier height modulation of nickeldysprosium-alloy germanosilicide contacts for strained P-FinFETs
由: Sinha, M., et al.
出版: (2014)

Quasi-two-dimensional transmission line model (QTD-TLM) for planar ohmic contact studies
由: Chor, E.F., et al.
出版: (2014)

Novel rare-earth dielectric interlayers for wide NMOS work-function tunability in Ni-FUSI gates
由: Lim, A.E.-J., et al.
出版: (2014)

Cu-doped nickel oxide interface layer with nanoscale thickness for efficient and highly stable printable carbon-based perovskite solar cell
由: Bashir, Amna, et al.
出版: (2020)

Thermal performance of a phase change material on a nickel-plated surface
由: Nurmawati, M.H., et al.
出版: (2014)

Contact resistance reduction technology using selenium egregation for N-MOSFETs with silicon-carbon source/drain
由: Wong, H.-S., et al.
出版: (2014)

Dopant segregation and nickel stanogermanide contact formation on p +Ge 0.947Sn 0.053 source/drain
由: Han, G., et al.
出版: (2014)

ADVANCED SOURCE AND DRAIN CONTACT ENGINEERING FOR GERMANIUM-TIN AND SILICON-GERMANIUM TRANSISTORS
由: XU HAIWEN
出版: (2023)

CONTACTS IN ORGANIC FIELD-EFFECT TRANSISTORS
由: SEAH WEI LING
出版: (2019)

Reliability and characterization for deep sub-micron CMOS devices
由: CHEN GANG
出版: (2010)