Top-down engineered silicon and germanium nanowire MOSFET

Top-down engineered silicon and germanium nanowire MOSFET

Ph.D

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書目詳細資料
主要作者:	PENG JIANWEI
其他作者:	ELECTRICAL & COMPUTER ENGINEERING
格式:	Theses and Dissertations
語言:	English
出版:	2011
主題:	Silicon, Germanium, Nanowire, MOSFET, Top-Down, Core/Shell
在線閱讀:	http://scholarbank.nus.edu.sg/handle/10635/25831
標簽:	添加標簽沒有標簽, 成為第一個標記此記錄!

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