Investigation on performance and reliability improvements of GaN-based heterostructure field effect transistors

• Main Author: TIAN FENG
• Other Authors: ELECTRICAL & COMPUTER ENGINEERING
• Format: Theses and Dissertations
• Language: English
• Published: 2011
• Subjects: AlGaN/GaN, heterostructure field effect transistors (HFETs), Schottky contact, metal-insulator-semiconductor (MIS), dielectric, gate leakage
• Online Access: http://scholarbank.nus.edu.sg/handle/10635/25843
• Institution: National University of Singapore

Ph.D