Analysis of E-field distributions within high-power devices using IBIC microscopy
Proceedings of the International Symposium on Power Semiconductor Devices and ICs
Saved in:
Main Authors: | Zmeck, M., Balk, L.J., Heiderhoff, R., Osipowicz, T., Watt, F., Phang, J.C.H., Khambadkone, A.M., Niedernostheide, F.-J., Schulze, H.-J. |
---|---|
Other Authors: | PHYSICS |
Format: | Conference or Workshop Item |
Published: |
2014
|
Online Access: | http://scholarbank.nus.edu.sg/handle/10635/51115 |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Institution: | National University of Singapore |
Similar Items
-
Analysis of premature breakdown in high-power devices using IBIC microscopy
by: Zmeck, M., et al.
Published: (2014) -
IBIC analysis of high-power devices
by: Osipowicz, T., et al.
Published: (2014) -
Modeling of deep buried structures in high-power devices based on proton beam induced charge microscopy
by: Zmeck, M., et al.
Published: (2014) -
Ion beam induced charge microscopy studies of power diodes
by: Zmeck, M., et al.
Published: (2014) -
Characterization of electronic materials and devices by scanning near-field microscopy
by: Balk, L.J., et al.
Published: (2014)