A comparison of hot-carrier degradation in tungsten polycide gate and poly gate p-MOSFETs
10.1109/16.662798
Saved in:
Main Authors: | Ang, D.S., Ling, C.H. |
---|---|
Other Authors: | ELECTRICAL ENGINEERING |
Format: | Article |
Published: |
2014
|
Online Access: | http://scholarbank.nus.edu.sg/handle/10635/53991 |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Institution: | National University of Singapore |
Similar Items
-
Effects of tungsten polycidation on the hot-carrier degradation in buried-channel LDD p-MOSFET's
by: Ang, D.S., et al.
Published: (2014) -
Comparative study on the channel hot-carrier degradation of N- and P-MOSFETs with CVD tungsten polycide gate
by: Low, C.L., et al.
Published: (2014) -
Hot-carrier induced degradation of polysilicon and tungsten polycide gate MOSFETs under maximum substrate and gate current stresses
by: Lou, C.L., et al.
Published: (2014) -
Hot-carrier reliability of n- and p-channel MOSFETs with polysilicon and CVD tungsten-polycide gate
by: Lou, C.L., et al.
Published: (2014) -
Hot-carrier reliability of non-degenerately doped tungsten polycide gate buried-channel p-MOSFETs
by: Lou, C.L., et al.
Published: (2014)