Effect of annealing profile on defect annihilation, crystallinity and size distribution of germanium nanodots in silicon oxide matrix

10.1063/1.1608480

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Bibliographic Details
Main Authors: Kan, E.W.H., Choi, W.K., Leoy, C.C., Chim, W.K., Antoniadis, D.A., Fitzgerald, E.A.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Article
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/55741
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Institution: National University of Singapore

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