Growth of InAs on micro- and nano-scale patterned GaAs(001) substrates by molecular beam epitaxy
10.1088/0957-4484/17/20/039
Saved in:
Main Authors: | Liu, H.F., Xiang, N., Chua, S.J. |
---|---|
Other Authors: | ELECTRICAL & COMPUTER ENGINEERING |
Format: | Article |
Published: |
2014
|
Online Access: | http://scholarbank.nus.edu.sg/handle/10635/56165 |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Institution: | National University of Singapore |
Similar Items
-
InAs/GaAs quantum dots on germanium-on-insulator-on-silicon substrates (GeOI) using molecular beam epitaxy
by: Fitzgerald, Eugene A., et al.
Published: (2013) -
High-quality InAs grown on GaAs substrate with an in situ micro-structured buffer
by: Miao, Z.L., et al.
Published: (2014) -
Intense terahertz emission from molecular beam epitaxy-grown GaAs/GaSb(001)
by: Sadia, Cyril P., et al.
Published: (2012) -
Molecular beam epitaxial growth of GaAs/AlGaAs heterostructure and nitrogen-containing alloy on patterned substrate
by: Loke, Wan Khai.
Published: (2008) -
MBE growth of InAs quantum dots on cratered GaAs (001) substrate: An extended set of vicinal surfaces
by: ZHENG YUEBING
Published: (2010)