Modeling study of InSb thin film for advanced III-V MOSFET applications
10.1109/IEDM.2006.346736
Saved in:
Main Authors: | Zhu, Z.G., Low, T., Li, M.F., Fan, W.J., Bai, P., Kwong, D.L., Samudra, G. |
---|---|
Other Authors: | ELECTRICAL & COMPUTER ENGINEERING |
Format: | Conference or Workshop Item |
Published: |
2014
|
Online Access: | http://scholarbank.nus.edu.sg/handle/10635/70998 |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Institution: | National University of Singapore |
Similar Items
-
Pseudo-potential band structure calculation of InSb ultra-thin films and its application to assess the n-metal-oxide-semiconductor transistor performance
by: Zhu, Z.G., et al.
Published: (2014) -
Properties of InSb thin film deposited by MOCVD
by: Zhang, Hao
Published: (2010) -
Growth and characterization of an InSb infrared photoconductor on Si via an AlSb/GaSb buffer
by: Jia, Bo Wen, et al.
Published: (2019) -
Ultimate performance projection of ballistic III-V ultra-thin-body MOSFET
by: Guo, Y., et al.
Published: (2014) -
Broadband terahertz plasmonic response of touching InSb disks
by: Hanham, S. M., et al.
Published: (2013)