Plasma etching optimization of oxide/nitride/oxide interpoly dielectric breakdown time in flash memory devices

Plasma etching optimization of oxide/nitride/oxide interpoly dielectric breakdown time in flash memory devices

10.1109/66.857949

Saved in:

書目詳細資料
Main Authors:	Cha, C.L., Chor, E.F., Gong, H., Zhang, A.Q., Chan, L.
其他作者:	ELECTRICAL ENGINEERING
格式:	Article
出版:	2014
主題:	Breakdown time Flash memory devices Interpoly dielectric Optimization Plasma etching
在線閱讀:	http://scholarbank.nus.edu.sg/handle/10635/80991
標簽:	添加標簽沒有標簽, 成為第一個標記此記錄!
機構:	National University of Singapore

相似書籍

Multi-layer high-κ interpoly dielectric for floating gate flash memory devices
由: Zhang, L., et al.
出版: (2014)

Constant current-stress induced breakdown of reoxidized nitrided oxide (ONO) in Flash memory devices
由: Cha, C.L., et al.
出版: (2014)

Effects of surface smoothness and deposition temperature of floating gates in flash memory devices to oxide/nitride/oxide interpoly dielectric breakdown
由: Cha, C.L., et al.
出版: (2014)

Gate Dielectric-Breakdown-Induced Microstructural Damage in MOSFETs
由: Tang, L.J., et al.
出版: (2014)

GATE DIELECTRIC BREAKDOWN - 2D MODELING OF THE DBIE IMPACT ON THE DEVICE CHARACTERISTICS
由: CAO YU
出版: (2019)

A new breakdown failure mechanism in HfO 2 gate dielectric
由: Ranjan, R., et al.
出版: (2014)

Breakdown of reoxidized nitrided oxide (ONO) in Flash memory devices upon current stressing
由: Cha, C.L., et al.
出版: (2014)

Connecting leaders in a nonuniform spark gap
由: Larsson, A.
出版: (2014)

Modelling and characterization of the quantum dot floatiing gate flash memory
由: ZHOU KAIHONG
出版: (2010)

DEVELOPMENT OF PLASMA ETCHING AND STRIPPING PROCESSES OF LOW-K DIELECTRICS FOR COPPER DAMASCENE METALLISATION
由: CHUA MAY LEE PAULINE
出版: (2019)

Gate dielectric degradation mechanism associated with DBIE evolution
由: Pey, K.L., et al.
出版: (2014)

Flash memory management with cooperation, adaptation and assistance
由: WANG CHUNDONG
出版: (2013)

Fabrication & electrical characterization of SiGe nanocrystal flash memory devices embedded in high k dielectrics
由: ROHIT KUMAR GUPTA
出版: (2010)

Evaluation of the dielectric breakdown of reoxidized nitrided oxide (ONO) in flash memory devices using constant current-stressing technique
由: Cha, C.L., et al.
出版: (2014)

WAFTL: A workload adaptive flash translation layer with data partition
由: Qingsong, W., et al.
出版: (2014)

Analysis of perovskite oxide etching using argon inductively coupled plasmas for photonics applications
由: Guanyu Chen, et al.
出版: (2021)

Design of reactive ion etching process based on ab-initio calculation - The first step-
由: Matsumoto, Shigeno, et al.
出版: (2007)

Application of novel gate materials for performance improvement in flash memory devices
由: PU JING
出版: (2010)

Restoration of postbreakdown gate oxide by white-light illumination
由: Kawashima, Tomohito, et al.
出版: (2018)

Self-consistent simulation of quantum dot flash memory device with SiO 2 and HfO 2 dielectrics
由: Chong, C.C., et al.
出版: (2014)

Reactive ion etching of transition-metal alloys
由: Akinaga, Hiro, et al.
出版: (2006)

Partial crystallization of HfO2 for two-bit/four-level SONOS-type flash memory
由: Zhang, G., et al.
出版: (2014)

Evaluation of rapid thermal nitrided ONO interpoly dielectric resistance to plasma process-induced damage
由: Cha, C.L., et al.
出版: (2014)

Formation of advanced gate stacks and their application to nano structure devices
由: CHEN JING HAO
出版: (2010)

Effects of constant current-stressing on reoxidized nitrided oxide (ONO) in flash memory devices
由: Cha, C.L., et al.
出版: (2014)

Vortex breakdown in an unconfined vortical flow
由: Khoo, B.C., et al.
出版: (2014)

A thorough study of quasi-breakdown phenomenon of thin gate oxide in dual-gate CMOSFET's
由: Guan, H., et al.
出版: (2014)

The statistical distribution of percolation current for soft breakdown in ultrathin gate oxide
由: Lin, W.H., et al.
出版: (2014)

The statistical distribution of percolation current for soft breakdown in ultrathin gate oxide
由: Lin, W.H., et al.
出版: (2014)

SURFACE ETCHING TECHNOLOGIES FOR MONOCRYSTALLINE SILICON WAFER SOLAR CELLS
由: TANG MUZHI
出版: (2016)

Hafnium aluminum oxide as charge storage and blocking-oxide layers in SONOS-type nonvolatile memory for high-speed operation
由: Tan, Y.N., et al.
出版: (2014)

Fabrication of nanostructures on polyethylene terephthalate substrate by interference lithography and plasma etching
由: Zhu, M., et al.
出版: (2014)

Charge trapping and TDDB characteristics of ultrathin MOCVD HfO2 gate dielectric on nitrided germanium
由: Bai, W., et al.
出版: (2014)

Wet etching characteristics and surface morphology evaluation of MOCVD grown HfO2 film
由: Balasubramanian, M., et al.
出版: (2014)

FABRICATION AND PATTERNING OF METAL AND METAL OXIDE NANOSTRUCTURES FOR ELECTRONIC APPLICATIONS
由: VIGNESH SURESH
出版: (2014)

Introducing Sub-Block Absorption to Improve the Performance of the Layered Indexless Indexed Flash Code
由: Fernandez, Proceso L, Jr, et al.
出版: (2014)

Electric-tree resistant performance and thermal charge-carrier dissipation mechanism of voltage stabilizer-modified EPDM
由: Li, Zhongyuan, et al.
出版: (2024)

Observational wear leveling: An efficient algorithm for flash memory management
由: Wang, C., et al.
出版: (2013)

Study on properties of metal nanocrystals for flash memory application
由: TAN YEE LIN, ZERLINDA
出版: (2010)

Top electrode modulated W/Ag/MgO/Au resistive random access memory for improved electronic synapse performance
由: Izzat Aziz, et al.
出版: (2022)