The preparation and characterization of nearly hysteresis-free metal-nitride-silicon capacitors on both p- and n-type silicon substrates

10.1063/1.351381

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Bibliographic Details
Main Author: Lau, W.S.
Other Authors: ELECTRICAL ENGINEERING
Format: Article
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/81256
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Institution: National University of Singapore

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