Analysing the thermal-annealing-induced photoluminescence blueshifts for GaInNAs/GaAs quantum wells: A genetic algorithm based approach
10.1088/0022-3727/41/11/115103
Saved in:
Main Authors: | Dixit, V., Liu, H.F., Xiang, N. |
---|---|
Other Authors: | ELECTRICAL & COMPUTER ENGINEERING |
Format: | Article |
Published: |
2014
|
Online Access: | http://scholarbank.nus.edu.sg/handle/10635/81958 |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Institution: | National University of Singapore |
Similar Items
-
Effect of nitrogen on indium segregation in GaInNAs/GaAs quantum wells
by: Dixit, V., et al.
Published: (2014) -
Structural and optical properties of GaInAs/GaAs and GaInNAs/GaNAs multiple quantum wells upon postgrowth annealing
by: Liu, H.F., et al.
Published: (2014) -
Quantum well intermixing in GaInNAs/GaAs structures
by: Sun, Handong, et al.
Published: (2009) -
Optical gain of segregated GaInNAs/GaAs quantum wells at emission wavelength of 1.3 micron
by: Dixit, V., et al.
Published: (2014) -
Photoluminescence characteristics of GaInNAs quantum wells annealed at high temperature
by: Ng, T. K., et al.
Published: (2013)