Highly oriented Ni(Pd)SiGe formation at 400 °c

Highly oriented Ni(Pd)SiGe formation at 400 °c

Journal of Applied Physics

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Bibliographic Details
Main Authors:	Jin, L.J., Pey, K.L., Choi, W.K., Fitzgerald, E.A., Antoniadis, D.A., Pitera, A.J., Lee, M.L., Tung, C.H.
Other Authors:	ELECTRICAL & COMPUTER ENGINEERING
Format:	Article
Published:	2014
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/82462
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Institution:	National University of Singapore

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