N-channel InGaAs field-effect transistors formed on germanium-on-insulator substrates

N-channel InGaAs field-effect transistors formed on germanium-on-insulator substrates

10.1143/APEX.5.116502

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Bibliographic Details
Main Authors:	Ivana, Subramanian, S., Owen, M.H.S., Tan, K.H., Loke, W.K., Wicaksono, S., Yoon, S.F., Yeo, Y.-C.
Other Authors:	ELECTRICAL & COMPUTER ENGINEERING
Format:	Article
Published:	2014
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/82748
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Institution:	National University of Singapore

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