Oxide-bypassed VDMOS (OBVDMOS): An alternative to superjunction high voltage MOS power devices
10.1109/55.936359
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Main Authors: | Liang, Y.C., Gan, K.P., Samudra, G.S. |
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Other Authors: | ELECTRICAL & COMPUTER ENGINEERING |
Format: | Article |
Published: |
2014
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Subjects: | |
Online Access: | http://scholarbank.nus.edu.sg/handle/10635/82857 |
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Institution: | National University of Singapore |
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