Silane-ammonia surface passivation for gallium arsenide surface-channel n-MOSFETs

Silane-ammonia surface passivation for gallium arsenide surface-channel n-MOSFETs

10.1109/LED.2008.2010831

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書目詳細資料
Main Authors:	Chin, H.-C., Zhu, M., Liu, X., Lee, H.-K., Shi, L., Tan, L.-S., Yeo, Y.-C.
其他作者:	ELECTRICAL & COMPUTER ENGINEERING
格式:	Article
出版:	2014
主題:	GaAs High mobility High-k MOSFET Surface passivation
在線閱讀:	http://scholarbank.nus.edu.sg/handle/10635/83019
標簽:	添加標簽沒有標簽, 成為第一個標記此記錄!

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