Carbon- and tin- Incorporated source/drain stressors for CMOS transistors

Carbon- and tin- Incorporated source/drain stressors for CMOS transistors

10.1149/1.2986751

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Bibliographic Details
Main Author:	Yeo, Y.-C.
Other Authors:	ELECTRICAL & COMPUTER ENGINEERING
Format:	Conference or Workshop Item
Published:	2014
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/83527
Tags:	Add Tag No Tags, Be the first to tag this record!
Institution:	National University of Singapore

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