Studies of NBTI in pMOSFETs with thermal and plasma nitrided SiON gate oxides by OFIT and FPM methods

Studies of NBTI in pMOSFETs with thermal and plasma nitrided SiON gate oxides by OFIT and FPM methods

10.1109/IRPS.2009.5173390

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書目詳細資料
Main Authors:	Liu, W.J., Huang, D., Sun, Q.Q., Liao, C.C., Zhang, L.F., Gan, Z.H., Wong, W., Li, M.-F.
其他作者:	ELECTRICAL & COMPUTER ENGINEERING
格式:	Conference or Workshop Item
出版:	2014
主題:	NBTI p-MOSFETs Plasma nitrided oxide Thermal nitrided oxide
在線閱讀:	http://scholarbank.nus.edu.sg/handle/10635/84243
標簽:	添加標簽沒有標簽, 成為第一個標記此記錄!

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