High-energy heavy ion beam annealing effect on ion beam synthesis of silicon carbide
Silicon carbide (SiC) is a superior material potentially replacing conventional silicon for high-power and high-frequency microelectronic applications. Ion beam synthesis (IBS) is a novel technique to produce large-area, high-quality and ready-to-use SiC crystals. The technique uses high-fluence car...
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Main Authors: | Khamsuwan J., Intarasiri S., Kirkby K., Jeynes C., Chu P.K., Kamwanna T., Yu L.D. |
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Format: | Article |
Language: | English |
Published: |
2014
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Online Access: | http://www.scopus.com/inward/record.url?eid=2-s2.0-80055101622&partnerID=40&md5=8b1167cc424b40170e73ac6342816520 http://cmuir.cmu.ac.th/handle/6653943832/7360 |
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Institution: | Chiang Mai University |
Language: | English |
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