Reduction of current collapse in AlGaN/GaN MISHEMT with bilayer SiN/Al2O3 dielectric gate stack

Reduction of current collapse in AlGaN/GaN MISHEMT with bilayer SiN/Al2O3 dielectric gate stack

We have studied the drain current dispersion characteristics of conventional AlGaN/GaN HEMTs and SiN/Al2O3/AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors (MISHEMT) fabricated on silicon substrate. The fabricated MISHEMT exhibited an IDmaxof >1000 mA/mm and gmmax of 241...

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التفاصيل البيبلوغرافية
المؤلفون الرئيسيون:	Anand, M. J., Ng, G. I., Vicknesh, S., Arulkumaran, Subramaniam, Ranjan, K.
مؤلفون آخرون:	School of Electrical and Electronic Engineering
التنسيق:	مقال
اللغة:	English
منشور في:	2014
الموضوعات:	DRNTU::Engineering::Electrical and electronic engineering::Electric power
الوصول للمادة أونلاين:	https://hdl.handle.net/10356/100484 http://hdl.handle.net/10220/24127
الوسوم:	إضافة وسم لا توجد وسوم, كن أول من يضع وسما على هذه التسجيلة!

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