Growth of p-type GaAs∕AlGaAs(111) quantum well infrared photodetector using solid source molecular-beam epitaxy

Growth of p-type GaAs∕AlGaAs(111) quantum well infrared photodetector using solid source molecular-beam epitaxy

A p-type GaAs/AlGaAs multi-quantum-well infrared photodetector(QWIP) was fabricated on a GaAs (111)A substrate by molecular-beam epitaxy using silicon as dopant. The same structure was also grown on a GaAs (100) wafer simultaneously to compare the material and structural properties. It was found tha...

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書目詳細資料
Main Authors:	Li, H., Mei, T., Karunasiri, G., Yuan, K. H., Fan, Weijun, Zhang, Dao Hua, Yoon, Soon Fatt
其他作者:	School of Electrical and Electronic Engineering
格式:	Article
語言:	English
出版:	2013
主題:	DRNTU::Engineering::Electrical and electronic engineering
在線閱讀:	https://hdl.handle.net/10356/100687 http://hdl.handle.net/10220/18030
標簽:	添加標簽沒有標簽, 成為第一個標記此記錄!

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