Computer simulation and modelling of electrical characteristics of ferroelectric films for device applications

Computer simulation and modelling of electrical characteristics of ferroelectric films for device applications

Ferroelectric thin film materials have attractive properties such as high dielectric constant and reversible, large remnant polarisation. These properties have made these materials attractive in applications, namely in the areas of non-volatile random access memory (NV-RAM) and ultra-high density dy...

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書目詳細資料
主要作者:	Lee, Teng Mong.
其他作者:	Zhu, Weiguang
格式:	Theses and Dissertations
語言:	English
出版:	2008
主題:	DRNTU::Engineering::Materials::Microelectronics and semiconductor materials::Thin films
在線閱讀:	http://hdl.handle.net/10356/13283
標簽:	添加標簽沒有標簽, 成為第一個標記此記錄!

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