Optimization of metal barrier layers for enhanced SOI-based Ge PIN photodetector performance

Optimization of metal barrier layers for enhanced SOI-based Ge PIN photodetector performance

This thesis investigates the optimization of titanium disilicide (TiSi₂) as a metal barrier layer for germanium PIN photodetectors on silicon-on-insulator (SOI) substrates to enhance their performance in high-speed optical communication systems. The study highlights the limitations of tantalum ni...

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書目詳細資料
主要作者:	Xu, Hanyuan
其他作者:	Tang Xiaohong
格式:	Thesis-Master by Coursework
語言:	English
出版:	Nanyang Technological University 2025
主題:	Engineering Physics SOI Metal barrier layer CMOS photodetector TaN TiSi
在線閱讀:	https://hdl.handle.net/10356/183095
標簽:	添加標簽沒有標簽, 成為第一個標記此記錄!
機構:	Nanyang Technological University
語言:	English

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