Electroplating of copper for application in sub-0.25 micron device manufacturing

Electroplating of copper for application in sub-0.25 micron device manufacturing

An in-depth study of the copper electroplating process was carried out with different process parameters such as seed materials, current densities and electrolytes in order to fabricate nanocrystalline electroplated copper to fill up the line and via trenches in sub-0.25 urn devices. The effect of a...

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書目詳細資料
主要作者:	Seah, Chin Hwee.
其他作者:	School of Applied Science
格式:	Theses and Dissertations
語言:	English
出版:	2009
主題:	DRNTU::Science
在線閱讀:	http://hdl.handle.net/10356/19328
標簽:	添加標簽沒有標簽, 成為第一個標記此記錄!

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