Growth and characterization of AlGaN/GaN HEMT heterostructures on 100-mm Si (111) by MBE

Growth and characterization of AlGaN/GaN HEMT heterostructures on 100-mm Si (111) by MBE

III-nitride semiconductors have received significant research attention and undergone immense development due to their widely found applications in microelectronic and optoelectronic devices. Among them, GaN based materials promise great potential for high frequency, high power, and high temperature...

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書目詳細資料
主要作者:	Manvi Agrawal
其他作者:	K. Radhakrishnan
格式:	Theses and Dissertations
語言:	English
出版:	2013
主題:	DRNTU::Engineering::Electrical and electronic engineering::Semiconductors DRNTU::Engineering::Electrical and electronic engineering::Applications of electronics DRNTU::Engineering::Electrical and electronic engineering::Microelectronics
在線閱讀:	https://hdl.handle.net/10356/54999
標簽:	添加標簽沒有標簽, 成為第一個標記此記錄!
機構:	Nanyang Technological University
語言:	English

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