High-κ Al2O3 material in low temperature wafer-level bonding for 3D integration application

• Main Authors: Tan, Chuan Seng, Fan, J., Tu, L. C.
• Other Authors: School of Electrical and Electronic Engineering
• Format: Article
• Language: English
• Published: 2014
• Subjects: DRNTU::Engineering::Electrical and electronic engineering
• Online Access: https://hdl.handle.net/10356/80088; http://hdl.handle.net/10220/19676
• Institution: Nanyang Technological University

This work systematically investigated a high-κ Al 2O3 material for low temperature wafer-level bonding for potential applications in 3D microsystems. A clean Si wafer with an Al 2O3 layer thickness of 50 nm was applied as our experimental approach. Bonding was initiated in a clean room ambient after...