Effect of low fluence laser annealing on ultrathin Lu2O3 high-k dielectric

• المؤلفون الرئيسيون: Darmawan, P., Setiawan, Y., Osipowicz, T., Lee, Pooi See, Ma, Jan
• مؤلفون آخرون: School of Materials Science & Engineering
• التنسيق: مقال
• اللغة: English
• منشور في: 2012
• الموضوعات: DRNTU::Engineering::Materials::Microelectronics and semiconductor materials::Thin films
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/94240; http://hdl.handle.net/10220/8092

The effect of low fluence single pulse laser annealing on a pulsed laser deposited high-k dielectric, Lu2O3 is reported. With low fluence laser irradiation, high “k” of 45 is achieved with an equivalent...