Growth mechanisms in thin film epitaxy of Si/SiGe from hydrides
10.1016/S0921-5107(01)00842-X
Saved in:
Main Authors: | Zhang, J., Woods, N.J., Breton, G., Price, R.W., Hartell, A.D., Lau, G.S., Liu, R., Wee, A.T.S., Tok, E.S. |
---|---|
Other Authors: | MATERIALS SCIENCE |
Format: | Conference or Workshop Item |
Published: |
2014
|
Subjects: | |
Online Access: | http://scholarbank.nus.edu.sg/handle/10635/113115 |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Institution: | National University of Singapore |
Similar Items
-
Optical second harmonic generation studies of epitaxial growth of Si and SiGe
by: Tok, E.S., et al.
Published: (2014) -
Dynamics and surface segregation during GSMBE of Si1-yCy and Si1-x-yGexCy on the Si(0 0 1) surface
by: Price, R.W., et al.
Published: (2014) -
Hydride Reduction by a Sodium Hydride-Iodide Composite
by: Too, Pei Chui, et al.
Published: (2017) -
Impact of local strain from selective epitaxial germanium with thin Si/SiGe buffer on high-performance p-i-n photodetectors with a low thermal budget
by: Loh, W.Y., et al.
Published: (2014) -
Sharp n-type doping profiles in Si/SiGe heterostructures produced by atomic hydrogen etching
by: Zhang, J., et al.
Published: (2014)