Heteroepitaxial growth of In0.30Ga0.70As high-electron mobility transistor on 200 mm silicon substrate using metamorphic graded buffer

• المؤلفون الرئيسيون: Kohen, D, Nguyen, X.S, Yadav, S, Kumar, A, Made, R.I, Heidelberger, C, Gong, X, Lee, K.H, Lee, K.E.K, Yeo, Y.C, Yoon, S.F, Fitzgerald, E.A
• مؤلفون آخرون: ELECTRICAL AND COMPUTER ENGINEERING
• التنسيق: مقال
• منشور في: 2020
• الموضوعات: Electron mobility; Epitaxial growth; Field effect transistors; Germanium; Metallorganic vapor phase epitaxy; Organometallics; Phase separation; Silicon wafers; Surface roughness; Channel length; Compositionally graded buffers; Graded buffer; High electron mobility transistor (HEMT); Metal-organic vapor phase epitaxy; Silicon substrates; Strain relaxing; Threading dislocation densities; High electron mobility transistors
• الوصول للمادة أونلاين: https://scholarbank.nus.edu.sg/handle/10635/176123

10.1063/1.4961025