Method to form shallow junction transistors while eliminating shorts due to junction spiking
US6297109
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Main Authors: | CHAN, LAP, CHA, CHER LIANG, SUNDARESAN, RAVISHANKAR |
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Other Authors: | ELECTRICAL & COMPUTER ENGINEERING |
Format: | Patent |
Published: |
2012
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Online Access: | http://scholarbank.nus.edu.sg/handle/10635/32601 |
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Institution: | National University of Singapore |
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